Micron ships its 232-layer 3D NAND flash with extra storage, higher efficiency and a smaller bundle dimension: Digital Pictures Overview


Micron has introduced its next-generation 232-layer NAND forward of subsequent week’s Flash Reminiscence Summit in California. The 232-layer NAND consists of the business’s quickest NAND I/O velocity of two.4 GB/s and is the world’s densest NAND. The flash reminiscence triple layer cell (TLC) density is 14.6 Gb/mm2, which is between 35% and 100% larger than the density of competing TLC merchandise.

Micron’s new NAND consists of the very best layer depend, most bits per sq. millimeter and quickest I/O velocity. It builds upon Micron’s prior 176-layer NAND and the brand new 232-layer NAND is well-suited for a spread of functions, together with shopper merchandise, cell gadgets and extra. The gadget guarantees 100% increased write bandwidth, larger than 75% increased learn bandwidth, and a 50% improve in switch price to 2.4 GB/s (ONFI bus). This efficiency is delivered in a 28% smaller bundle. As a result of the 232-layer NAND is 28% smaller than its predecessor, it is well-suited to skinny and light-weight laptop computer designs. Likewise, space-constrained and power-conscious cell gadgets can use the brand new NAND. The brand new 232-layer 3D NAND is transport on chosen Essential-branded SSDs already, with extra merchandise primarily based on the expertise transport later this 12 months.

Micron writes, ‘This primary-to-market 232-layer expertise represents Micron’s sixth era of NAND going into high-volume manufacturing. The breakthrough excessive layer depend, together with CuA (CMOS underneath array) expertise, permits us to ship big storage capability as much as 1 terabit per chip on a really small footprint. Because of this, the bit density per space on the 232-layer NAND gadget is over 45% increased than that for the earlier 176-layer era, an incredible improve in functionality! The rise in density additionally permits improved kind issue packages, reminiscent of the brand new 11.5mm x 13.5mm bundle, which is 28% smaller than the packages for previous-generation chips. All because of this extra sorts of gadgets can now be geared up with giant capability, high-performance storage.’

The 232L NAND contains a pair of 116-layer decks. It is the primary time Micron has ever produced a single deck over 100 layers. With the larger variety of decks and larger density, the 232L NAND is Micron’s first 1Tbit TLC die. This implies Micron can produce 2TB chip packages by stacking 16 of its 232L dies.

Constructing the brand new 3D NAND flash is not as easy as merely including extra layers. Micron writes, ‘These gadgets will be difficult to manufacture, requiring many lots of of particular person processes to take a uncooked wafer by way of to accomplished dies, or chips.’ Essentially the most difficult a part of the method is stacking layers increased whereas sustaining uniformity.

‘Micron’s 232-layer NAND is a watershed second for storage innovation as first proof of the potential to scale 3D NAND to greater than 200 layers in manufacturing,’ mentioned Scott DeBoer, government vp of expertise and merchandise at Micron. ‘This groundbreaking expertise required in depth innovation, together with superior course of capabilities to create excessive side ratio constructions, novel supplies developments and modern design enhancements that construct on our market-leading 176-layer NAND expertise.’

For extra info, go to Micron.


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